CM1200HG-66H Powerex Inc, CM1200HG-66H Datasheet - Page 4

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CM1200HG-66H

Manufacturer Part Number
CM1200HG-66H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200HG-66H

Prx Availability
RequestQuote
Voltage
3300V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1200HG-66H
Manufacturer:
MIT
Quantity:
20 000
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2400
2000
1600
1200
800
400
0
6
5
4
3
2
1
0
0
0
T
V
j
GE
= 125 C
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER VOLTAGE ( V )
400
= 15V
1
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
COLLECTOR CURRENT ( A )
V
V
800
2
GE
GE
( TYPICAL )
( TYPICAL )
= 20V
= 15V
1200
3
1600
4
T
T
V
V
j
j
2000
V
GE
GE
= 25 C
= 125 C
GE
5
= 12V
= 10V
=8V
2400
6
2400
2000
1600
1200
800
400
0
6
5
4
3
2
1
0
0
0
V
CE
= 20V
400
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
T
T
2
GATE-EMITTER VOLTAGE ( V )
j
j
= 25 C
= 125 C
EMITTER CURRENT ( A )
FREE-WHEEL DIODE
800
MITSUBISHI HVIGBT MODULES
4
HIGH POWER SWITCHING USE
( TYPICAL )
( TYPICAL )
1200
6
CM1200HG-66H
1600
8
INSULATED TYPE
T
T
j
j
2000
= 25 C
= 125 C
10
2400
12
Jul. 2005

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