CM1200HG-90R Powerex Inc, CM1200HG-90R Datasheet - Page 5
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CM1200HG-90R
Manufacturer Part Number
CM1200HG-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM1200HG-90R.pdf
(8 pages)
Specifications of CM1200HG-90R
Prx Availability
RequestQuote
Voltage
4500V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No
< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
June 2011
HALF-BRIDGE SWITCHING ENERGY
CAPACITANCE CHARACTERISTICS
1000
16
14
12
10
100
8
6
4
2
0
CHARACTERISTICS (TYPICAL)
10
0
1
0.1
V
R
L
Inductive load
S
CC
G(on)
= 150nH, T
= 2800V, V
V
f = 100kHz
= 2.7Ω, R
500
GE
Collector-Emitter Voltage [V]
= 0V, T
Collector Current [A]
j
(TYPICAL)
= 125°C
GE
G(off)
j
= ±15V
= 25°C
1000
1
= 10Ω
1500
10
2000
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
C
C
C
oes
res
ies
2500
E
E
E
100
rec
on
off
5
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
-10
-15
12
10
20
15
10
-5
8
6
4
2
0
5
0
CHARACTERISTICS (TYPICAL)
0
0
V
V
T
CC
GE
j
= 125°C, Inductive load
V
T
= ±15V, L
= 2800V, I
CE
j
= 25°C
= 2800V, I
1
S
5
C
= 150nH
(TYPICAL)
Gate resistor [Ohm]
= 1200A
C
Gate Charge [µC]
= 1200A
E
E
2
rec
on
10
3
15
4
20
5