BTN 7973B Infineon Technologies, BTN 7973B Datasheet
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BTN 7973B
Specifications of BTN 7973B
Related parts for BTN 7973B
BTN 7973B Summary of contents
Page 1
...
Page 2
Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 3
High Current PN Half Bridge NovalithIC™ 1 Overview Features Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ °C) • High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ °C) Low ...
Page 4
Block Diagram The BTN7973B is part of the NovalithIC™ family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high current half-bridge. All three ...
Page 5
Pin Configuration 3.1 Pin Assignment Figure 3 Pin Assignment BTN7973B (top view) 3.2 Pin Definitions and Functions Pin Symbol 1 GND INH 4,8 OUT Bold type: pin needs power wiring ...
Page 6
General Product Characteristics 4.1 Absolute Maximum Ratings 1) Absolute Maximum Ratings = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin T j (unless otherwise specified) Pos. Parameter Voltages 4.1.1 Supply Voltage ...
Page 7
Absolute Maximum Ratings (cont’d) = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin T j (unless otherwise specified) Pos. Parameter ESD Susceptibility 4.1.12 ESD Resistivity HBM IN, INH, SR, IS OUT, GND, ...
Page 8
Functional Range Pos. Parameter 4.2.1 Supply Voltage Range for Normal Operation 4.2.2 Extended Supply Voltage Range for Operation 4.2.3 Junction Temperature Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical ...
Page 9
Block Description and Characteristics 5.1 Supply Characteristics -40 °C to +150 ° (unless otherwise specified) Pos. Parameter General 5.1.1 Supply Current 5.1.2 Quiescent Current Figure 5 Typical Quiescent ...
Page 10
Power Stages The power stages of the BTN7973B consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in ...
Page 11
Power Stages - Static Characteristics = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter High Side ...
Page 12
Switching Times dr( OUT 90% 10% Figure 7 Definition of switching times high side ( ( ( OUT 90% 10% Figure 8 Definition of ...
Page 13
Power Stages - Dynamic Characteristics = -40 °C to +150 ° 13 (unless otherwise specified) Pos. Parameter High Side Switch Dynamic Characteristics 5.2.7 Rise-Time 5.2.8 Slew Rate HS on 5.2.9 ...
Page 14
-40 °C to +150 ° (unless otherwise specified) Pos. Parameter Low Side Switch Dynamic Characteristics 5.2.13 Rise-Time 5.2.14 Slew Rate LS off 5.2.15 Switch off Delay Time LS 5.2.16 ...
Page 15
Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used ...
Page 16
CLx I CLx 0 Figure 9 Timing Diagram Current Limitation (Inductive Load) High Side Switch CLH0 500 1000 Figure 10 Typical Current ...
Page 17
High Side Switch Figure 11 Typical Current Limitation Detection Levels vs. Supply Voltage In combination with a typical inductive load, such as a motor, this results in a switched ...
Page 18
Electrical Characteristics - Protection Functions = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Under Voltage ...
Page 19
Control and Diagnostics 5.4.1 Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In ...
Page 20
I [mA IS(lim) Figure 13 Sense Current vs. Load Current 5.4.5 Truth Table Device State Normal Operation Over-Voltage Mode (OVM) Under-Voltage (UV) Overtemperature (OT) or Short Circuit of HSS or LSS Current Limitation Mode/ Overcurrent (OC) 1) Will ...
Page 21
Electrical Characteristics - Control and Diagnostics = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Control ...
Page 22
Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 6.1 ...
Page 23
Half-bridge Configuration Considerations If the BTN7973B is used in a half-bridge configuration with the load connected between OUT and VS and the supply voltage is exceeding the Overvoltage Mode ON level (Smart Clamping)” feature leads to automatically turning off ...
Page 24
Package Outlines 0...0 0.6 1) Typical Metal surface min 7.25 6.9 All metal surfaces tin plated, except area of cut. Footprint Figure 16 PG-TO263-7-1 ( Plastic Green Transistor Single Outline Package Green Product ...
Page 25
Revision History Revision Date Changes 1.0 2009-09-09 Initial version Data Sheet Data Sheet High Current PN Half Bridge 25 BTN7973B Revision History Rev. 1.0, 2009-09-09 ...
Page 26
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...