BTS 3028SDL Infineon Technologies, BTS 3028SDL Datasheet - Page 7

• Manufacturer Part Number: BTS 3028SDL
• Manufacturer: Infineon Technologies

Specifications of BTS 3028SDL

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 5.0 A
• Rds (on) (max): 30.0 mOhm
• Id(lim) (min): 18.0 A

4
4.1
Absolute Maximum Ratings
T
(unless otherwise specified)
Pos.
Voltages
4.1.1
4.1.2
4.1.3
4.1.4
Energies
4.1.5
Temperatures
4.1.6
4.1.7
ESD Susceptibility
4.1.8
1) Not subject to production test, specified by design.
2) Active clamped.
3) Active limited
4) ESD susceptibility, HBM according to EIA/JESD 22-A114, Pin Source connected to Ground
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
4.2
Pos.
4.2.1
4.2.2
Datasheet
j
= -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
maximum rating conditions for extended periods may affect device reliability.
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation
Parameter
Drain voltage
Drain voltage for short circuit protection
Input Current
Drain Current
Unclamped single pulse inductive energy
single pulse
Operating temperature
Storage temperature
ESD Resistivity
Parameter
Input pin voltage (device ON)
Drain voltage
General Product Characteristics
Absolute Maximum Ratings
Functional Range
1)
Symbol
V
V
IN
D
Symbol Limit Values Unit
V
V
I
I
E
T
T
V
IN
D
J
STG
ESD
D
D(SC)
AS
7
Min.
2
2.5
Min.
–
–
self limited
-2
–
–
-40
-55
-2
Limit Values
Max.
60
36
18
350
2
2
+150 °C
+150 °C
Max.
10
36
Smart low side power switch
V
V
mA
mA
A
mJ
kV
General Product Characteristics
HITFET - BTS3028SDL
Unit
V
V
Test Conditions
2)
V
-0.2 V <
V
or
3)
I
V
T
–
–
HBM
D(Start)
J(start)
IN
IN
bat
V
V
IN
= 5 V
< -0.2 V
IN
= 24 V;
4)
= 0 V,
> 10 V
= 7.5A
= 150 °C
Rev. 1.0, 2009-12-06
Conditions
–
–
V
IN
I
< 10 V
D
= 10 mA