1MBH75D-060S Fuji Electric holdings CO.,Ltd, 1MBH75D-060S Datasheet
1MBH75D-060S
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1MBH75D-060S Summary of contents
Page 1
... Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · ...
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... Outline drawings, mm TO-3PL Switching waveform (Inductance load) Mesurement circuit Gate Collector Emitter Molded IGBT ...
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... Characteristics Collector current vs. Collector-Emitter voltage Tj=25°C Collector-Emitter Voltage : V Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C Gate-Emitter Voltage : V Switching time vs. Collector current V =300V =+15V, Tj=125° Collector current : I Collector current vs. Collector-Emitter voltage Tj=125°C (V) CE Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C ...
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... Characteristics Switching time vs =300V, I =75A, V =+15V, Tj=125° Gate resistance : R Dynamic input characteristics Tj=25°C Gate charge : Qg (nc) Reverse Biased Safe Operating Area = < 20V Collector-Emitter voltage : < =15V, Tj 125°C GE (V) CE IGBT Module Switching time vs. R ...
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... Characteristics Reverse recovery time vs. Forward current V =300V, -di/dt=100A/µsec R Forward current : I Forward voltage vs. Forward current Forward Voltage : V Transient thermal resistance Pulse width : P Reverse recovery current vs. Forward current (V) F (sec) W IGBT Module =300V, -di/dt=100A/µsec Forward current : Reverse recovery chracteristics vs. -di/dt ...