APT13GP120BDQ1 Advanced Power Technology, APT13GP120BDQ1 Datasheet
APT13GP120BDQ1
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APT13GP120BDQ1 Summary of contents
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TYPICAL PERFORMANCE CURVES POWER MOS 7 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been ...
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Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...
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T = -55° 125° 25° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics 250µs ...
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V = 15V 600V 25°C 125° 5Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = ...
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TYPICAL PERFORMANCE CURVES 3,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. ...
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APT15DQ120 90% Gate Voltage t d(off) Collector Voltage 90 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions t Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J APT13GP120B_S(G) Gate ...