RA03M8894M-101 MITSUBISHI, RA03M8894M-101 Datasheet

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RA03M8894M-101

Manufacturer Part Number
RA03M8894M-101
Description
Manufacturer
MITSUBISHI
Datasheet

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Part Number:
RA03M8894M-101
Quantity:
1 400
DESCRIPTION
Module for 7.2-volt portable radios that operate in the 889- to
941-MHz range.
enhancement-mode MOSFET transistors. Without the gate
voltage (V
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
• P
• Broadband Frequency Range: 889-941MHz
• Low-Power Control Current I
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
RoHS COMPLIANT
• RA03M8894M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
ORDERING INFORMATION:
RA03M8894M
GG
(I
current with the gate voltage and controlling the output power
with the input power
How ever, it applicable to the following exceptions of RoHS Directions.
lead in electronic Ceramic parts.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
2.Lead in electronic Ceramic parts.
DD
T
out
>32% @ P
=3.5V, the typical gate current is 1 mA.
The RA03M8894M is a 3.6-watt RF MOSFET Amplifier
The battery can be connected directly to the drain of the
fluorescent tubes.
>3.6W @ V
0 @ V
RA03M8894M-101
ORDER NUMBER
GG
=0V), only a small leakage current flows into the
DD
out
=7.2V, V
=3W (V
DD
=7.2V, V
ELECTROSTATIC SENSITIVE DEVICE
GG
GG
=0V)
OBSERVE HANDLING PRECAUTIONS
control), V
GG
RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
GG
=3.5V, P
=1mA (typ) at V
DD
in
=50mW
=7.2V, P
SUPPLY FORM
50 modules/tray
Antistatic tray,
GG
in
=50mW
=3.5V
1/9
RA
RA03M8894
RA
RA
BLOCK DIAGRAM
1
1
2
3
4
5
Silicon RF Power Semiconductors
RF Input (P
Gate Voltage (V
Drain Voltage (V
RF Output (P
RF Ground (Case)
03M8894
03M8894
03M8894M M M M
2
PACKAGE CODE: H46S
in
)
out
)
GG
DD
), Power Control
), Battery
3
28 Jun 2010
4
5

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RA03M8894M-101 Summary of contents

Page 1

... RoHS COMPLIANT • RA03M8894M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts ...

Page 2

... Output Power out Total Efficiency Harmonic o Input VSWR in I Gate Current GG — Stability — Load VSWR Tolerance All parameters, conditions, ratings, and limits are subject to change without notice. RA03M8894M CONDITIONS V <3. <7.2V, P =0mW DD in f=889-941MHz = =+25° ...

Page 3

... DRAIN VOLTAGE 10 9 f=889MHz, V =3.5V =50mW DRAIN VOLTAGE V RA03M8894M =+25° =50 , unless otherwise specified =7. =50mW OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER ...

Page 4

... GATE VOLTAGE V GG OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 8 f=941MHz =7.2V =50mW 1.5 2 2.5 GATE VOLTAGE V GG RA03M8894M =+25° =50 , unless otherwise specified out (V) DD OUTPUT POWER and DRAIN CURRENT ...

Page 5

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) RA03M8894M Silicon RF Power Semiconductors RA RA03M8894 RA RA RoHS COMPLIANT 1 RF Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case) 5/9 03M8894 03M8894 03M8894M out 28 Jun 2010 ...

Page 6

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Signal Pre- Attenuator Attenuator Generator amplifier C1, C2: 4700pF, 22uF in parallel EQUIVALENT CIRCUIT 2 1 RA03M8894M RoHS COMPLIANT Power DUT Meter =50 G Directional Coupler Power DC Power Supply V Supply 6/9 Silicon RF Power Semiconductors ...

Page 7

... When mounting the module with the thermal resistance of 4.67W, the channel temperature of each stage transistor is 36.3 ° C ch1 air 51.5 ° C ch2 air The 175° C maximum rating for the channel temperatur e ensures application under derated conditions. RA03M8894M =32% out th(ch-case (° C/W) (A) 4.5 0.30 4 ...

Page 8

... Please refer to the additional precautions in the formal specification sheet. RA03M8894M =3.5V (maximum), the nominal output power becomes available. GG 8/9 ...

Page 9

... If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. RA03M8894M Keep safety first in your circuit designs ! Notes regarding these materials ...

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