RA07H0608M-101 MITSUBISHI, RA07H0608M-101 Datasheet

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RA07H0608M-101

Manufacturer Part Number
RA07H0608M-101
Description
Manufacturer
MITSUBISHI
Datasheet

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Part Number
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Part Number:
RA07H0608M-101
Manufacturer:
HITTITE
Quantity:
1 400
DESCRIPTION
for 12.5-volt portable radios that operate in the 68- to 88-MHz
range.
enhancement-mode MOSFET transistors. Without the gate
voltage (V
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
• P
• Broadband Frequency Range: 68-88MHz
• Low-Power Control Current I
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
RoHS COMPLIANT
• RA07H0608M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot
• This product include the lead in the Glass of electronic parts and the
ORDERING INFORMATION:
RA07H0608M
GG
(I
current with the gate voltage and controlling the output power
with the input power
Marking.
lead in electronic Ceramic parts.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
2.Lead in electronic Ceramic parts.
DD
T
out
>38% @ P
=5V, the typical gate current is 1 mA.
The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
The battery can be connected directly to the drain of the
fluorescent tubes.
>7W @ V
0 @ V
RA07H0608M-101
ORDER NUMBER
GG
=0V), only a small leakage current flows into the
DD
out
=12.5V, V
DD
=7W (V
=12.5V, V
ELECTROSTATIC SENSITIVE DEVICE
GG
GG
OBSERVE HANDLING PRECAUTIONS
=0V)
GG
control), V
=5V, P
GG
RoHS Compliance
=1mA (typ) at V
in
=30mW
DD
=12.5V, P
SUPPLY FORM
50 modules/tray
Antistatic tray,
GG
in
=5V
=30mW
,
68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
1/9
RA
RA
RA
RA07H0608
BLOCK DIAGRAM
1
1
2
3
4
5
Silicon RF Power Semiconductors
RF Input (P
Gate Voltage (V
Drain Voltage (V
RF Output (P
RF Ground (Case)
07H0608
07H0608
07H0608M M M M
2
PACKAGE CODE: H46S
in
)
out
)
GG
DD
), Power Control
), Battery
3
28 Jun 2010
4
5

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RA07H0608M-101 Summary of contents

Page 1

... RoHS COMPLIANT • RA07H0608M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts ...

Page 2

... Output Power out Total Efficiency Harmonic o Input VSWR in I Gate Current GG — Stability — Load VSWR Tolerance All parameters, conditions, ratings, and limits are subject to change without notice. RA07H0608M CONDITIONS V =0V < <12.5V, P <30mW DD in f=68-88MHz =50 ...

Page 3

... INPUT POWER P in OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 20 f=68MHz, V =5V =30mW DRAIN VOLTAGE V RA07H0608M =+25° =50 , unless otherwise specified 140 -10 120 -20 100 - - =12.5V DD -50 P =30mW in 20 ...

Page 4

... GATE VOLTAGE V OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 14 f=88MHz =12.5V =30mW 3.5 4 4.5 GATE VOLTAGE V RA07H0608M =+25° =50 , unless otherwise specified out (V) DD OUTPUT POWER and DRAIN CURRENT ...

Page 5

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) RA07H0608M Silicon RF Power Semiconductors RoHS COMPLIANT 1 RF Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case) 5/9 RA RA07H0608 RA RA 07H0608M 07H0608 07H0608 ) out 28 Jun 2010 ...

Page 6

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Signal Pre- Attenuator Attenuator Generator amplifier C1, C2: 4700pF, 22uF in parallel EQUIVALENT CIRCUIT 2 1 RA07H0608M RoHS COMPLIANT Power DUT Meter =50 G Directional Coupler Power DC Power Supply V Supply 6/9 Silicon RF Power Semiconductors ...

Page 7

... When mounting the module with the thermal resistance of 2.62 ° C/W, the channel temperature of each sta ge transistor is 41.6 ° C ch1 air 58.3 ° C ch2 air The 175° C maximum rating for the channel temperatur e ensures application under derated conditions. RA07H0608M =38% out th(ch-case (° C/W) (A) 4.5 0.30 3 ...

Page 8

... Please refer to the additional precautions in the formal specification sheet. RA07H0608M =5V (maximum), the nominal output power becomes available. GG 8/9 ...

Page 9

... If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. RA07H0608M Keep safety first in your circuit designs ! Notes regarding these materials ...

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