RA07M1317M-101 MITSUBISHI, RA07M1317M-101 Datasheet

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RA07M1317M-101

Manufacturer Part Number
RA07M1317M-101
Description
Manufacturer
MITSUBISHI
Datasheet

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Part Number:
RA07M1317M-101
Manufacturer:
MITSUBISHI
Quantity:
442
DESCRIPTION
Module for 7.2-volt portable radios that operate in the 135- to
175-MHz range.
enhancement-mode MOSFET transistors. Without the gate
voltage (V
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
• P
• η
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
RoHS COMPLIANCE
• RA07M1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
ORDERING INFORMATION:
RA07M1317M
GG
(I
current with the gate voltage and controlling the output power
with the input power
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
2.Lead in electronic Ceramic parts.
DD
T
out
>45% @ P
=3.5V, the typical gate current is 1 mA.
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier
The battery can be connected directly to the drain of the
This module is designed for non-linear FM modulation, but
fluorescent tubes.
≅0 @ V
>6.5W @ V
RA07M1317M-101
ORDER NUMBER
GG
=0V), only a small leakage current flows into the
DD
out
=7.2V, V
DD
=6W (V
=7.2V, V
ELECTROSTATIC SENSITIVE DEVICE
GG
GG
=0V)
RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
OBSERVE HANDLING PRECAUTIONS
control), V
GG
GG
=3.5V, P
=1mA (typ) at V
DD
in
SUPPLY FORM
50 modules/tray
=20mW
=7.2V, P
Antistatic tray,
GG
in
=20mW
=3.5V
1/9
RA07M1317M
BLOCK DIAGRAM
1
1
2
3
4
5
Silicon RF Power Semiconductors
RF Input (P
Gate Voltage (V
Drain Voltage (V
RF Output (P
RF Ground (Case)
2
PACKAGE CODE: H46S
in
)
out
)
GG
DD
), Power Control
), Battery
3
30 Jun 2010
4
5

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RA07M1317M-101 Summary of contents

Page 1

... RoHS COMPLIANCE • RA07M1317M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts ...

Page 2

... GG V =7.2V =20mW in V =4.0-9.2V, P =10-30mW, P < out Load VSWR=4:1 V =9.2V, P =20mW out GG Load VSWR=20:1 2/9 Silicon RF Power Semiconductors RA07M1317M RoHS COMPLIANCE RATING 9 -30 to +90 -40 to +110 MIN TYP 135 - 6 control parasitic oscillation control), No degradation or destroy ...

Page 3

... P out f=175MHz 1 V =7. =3. (dBm) in 3/9 Silicon RF Power Semiconductors RA07M1317M RoHS COMPLIANCE HARMONICS versus FREQUENCY V =7. =20m =6W in out =6W out 125 135 145 155 165 175 FREQUENCY f (MHz) P out ...

Page 4

... 3.5 4 1.5 ( out 3.5 4 (V) GG 4/9 Silicon RF Power Semiconductors RA07M1317M RoHS COMPLIANCE versus DRAIN VOLTAGE f=165MHz V =3. out P =20m DRAIN VOLTAGE V (V) DD versus GATE VOLTAGE f=165MHz V =7. out P =20m W ...

Page 5

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) RA07M1317M Silicon RF Power Semiconductors RA07M1317M RoHS COMPLIANCE 1 RF Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case) 5 out 30 Jun 2010 ...

Page 6

... DUT Meter =50Ω G Directional Coupler Power DC Power Supply V Supply 6/9 Silicon RF Power Semiconductors RA07M1317M Spectrum 5 Analyzer =50Ω L Directional Attenuator Coupler + - Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case) 30 Jun 2010 Power ...

Page 7

... R I =45% out th(ch-case (°C/W) (A) 4.0 0.40 2.4 1. case =6.5W, the required thermal resistance R out 7/9 Silicon RF Power Semiconductors RA07M1317M RoHS COMPLIANCE V DD (V) 7 out in th(ch-case 5.6 °C case = T + 15.6 °C case ) below 90°C. For an ambient case ...

Page 8

... Please refer to the additional precautions in the formal specification sheet. RA07M1317M =3.5V (maximum), the nominal output power becomes available. GG 8/9 Silicon RF Power Semiconductors RA07M1317M RoHS COMPLIANCE Jun 2010 ...

Page 9

... If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. RA07M1317M Keep safety first in your circuit designs ! Notes regarding these materials 9/9 Silicon RF Power Semiconductors RA07M1317M RoHS COMPLIANCE 30 Jun 2010 ...

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