M29W800DT-70N6 STMicroelectronics, M29W800DT-70N6 Datasheet
M29W800DT-70N6
Manufacturer Part Number
M29W800DT-70N6
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29W800DB-70N6.pdf
(49 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W800DT-70N6
Manufacturer:
ST
Quantity:
3 500
Company:
Part Number:
M29W800DT-70N6
Manufacturer:
ST
Quantity:
3 500
Company:
Part Number:
M29W800DT-70N6
Manufacturer:
ST
Quantity:
9 340
Part Number:
M29W800DT-70N6
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M29W800DT-70N6E
Manufacturer:
Numonyx
Quantity:
11 520
Company:
Part Number:
M29W800DT-70N6E
Manufacturer:
MICRON
Quantity:
325
Part Number:
M29W800DT-70N6E
Manufacturer:
ST
Quantity:
20 000
Part Number:
M29W800DT-70N6T
Manufacturer:
ST
Quantity:
20 000
Features
March 2006
Supply voltage
– V
Access times: 45, 70, 90ns
Programming time
– 10µs per Byte/Word typical
19 memory blocks
– 1 Boot block (Top or Bottom location)
– 2 Parameter and 16 main blocks
Program/Erase controller
– Embedded Byte/Word Program algorithms
Erase Suspend and Resume modes
– Read and Program another Block during
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit Security Code
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer Code: 0020h
– Top Device Code M29W800DT: 22D7h
– Bottom Device Code M29W800DB: 225Bh
Read
Erase Suspend
CC
= 2.7V to 3.6V for Program, Erase and
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Rev 8
3V Supply Flash Memory
TFBGA48 (ZE)
TSOP48 (N)
12 x 20 mm
SO44 (M)
6 x 8 mm
M29W800DB
M29W800DT
FBGA
www.st.com
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