APTC80DDA29T3 Advanced Power Technology, APTC80DDA29T3 Datasheet - Page 4
APTC80DDA29T3
Manufacturer Part Number
APTC80DDA29T3
Description
Dual boost chopper Super Junction MOSFET Power Module
Manufacturer
Advanced Power Technology
Datasheet
1.APTC80DDA29T3.pdf
(6 pages)
Typical performance Curve
1.4
1.3
1.2
1.1
0.9
0.8
40
35
30
25
20
15
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
5
0
1
0
0
0
Low Voltage Output Characteristics
Normalized to
V
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
GS
V
V
=10V @ 7.5A
0.9
0.3
0.05
0.7
0.5
GS
DS
0.1
5
=15&10V
5
, Drain to Source Voltage (V)
R
DS(on)
I
D
, Drain Current (A)
10
vs Drain Current
10
0.0001
15
15
APT website – http://www.advancedpower.com
20
V
GS
=10V
V
GS
20
=20V
25
rectangular Pulse Duration (Seconds)
6.5V
4.5V
5.5V
4V
5V
6V
25
30
0.001
Single Pulse
0.01
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
DC Drain Current vs Case Temperature
25
0
APTC80DDA29T3
V
250µs pulse test @ < 0.5 duty cycle
DS
V
1
> I
GS
T
Transfert Characteristics
50
D
, Gate to Source Voltage (V)
C
(on)xRDS(on)MAX
, Case Temperature (°C)
2
T
J
=125°C
3
T
75
J
=25°C
0.1
4
100
5
T
J
=-55°C
6
125
7
1
150
8
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