M25P16-VME6TP Numonyx, B.V., M25P16-VME6TP Datasheet - Page 34
![no-image](/images/no-image-200.jpg)
M25P16-VME6TP
Manufacturer Part Number
M25P16-VME6TP
Description
16 Mbit, serial Flash memory, 75 MHz SPI bus interface
Manufacturer
Numonyx, B.V.
Datasheet
1.M25P16-VME6TP.pdf
(55 pages)
- Current page: 34 of 55
- Download datasheet (2Mb)
Instructions
Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) instruction
1. The value of the 8-bit electronic signature, for the M25P16, is 14h.
Figure 20. Release from Deep Power-down (RES) instruction sequence
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before
the whole of the 8-bit electronic signature has been transmitted for the first time (as shown in
still ensures that the device is put into Standby Power mode. If the device was not previously in the Deep
Power-down mode, the transition to the Standby Power mode is immediate. If the device was previously
in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by t
and Chip Select (S) must remain High for at least t
device waits to be selected, so that it can receive, decode and execute instructions.
34/55
S
C
D
Q
S
C
D
Q
0
sequence and data-out sequence
1
High Impedance
2
Instruction
3
High Impedance
0
4
1
5
2
Instruction
6
3
7
MSB
23
4
8
22 21
5
9 10
3 Dummy bytes
6
7
3
28 29 30 31 32 33 34 35
2
RES1
1
Deep Power-down mode
0
(max). Once in the Standby Power mode, the
MSB
7
t
RES1
Electronic Signature Out
Deep Power-down mode
6
5
4
3
36 37 38
2
Standby mode
1
0
t
RES2
Standby mode
Figure
AI04078B
M25P16
RES1
AI04047C
20),
,
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