GI70N03 E-Tech Electronics LTD, GI70N03 Datasheet
GI70N03
Related parts for GI70N03
GI70N03 Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description I The G 70N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and ...
Page 2
Electrical Characteristics ( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj= Drain-Source Leakage Current(Tj= 150 : Static Drain-Source ...
Page 3
Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Maximum Drain Current v.s. Case Temperature I G 70N03 ISSUED DATE :2005/02/25 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. ...
Page 4
Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Forward Characteristics of Reverse Diode I G 70N03 Fig 8. Effective Transient Thermal Impedance Fig 10. Typical Capacitance Characteristics Fig 12. Gate Threshold Voltage v.s. Junction Temperature ...
Page 5
Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its ...