GI80L02 E-Tech Electronics LTD, GI80L02 Datasheet
GI80L02
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GI80L02 Summary of contents
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description I The G 80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast ...
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Electrical Characteristics ( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj= Drain-Source Leakage Current(Tj= 150 : Static Drain-Source ...
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Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode I G 80LS02 ISSUED DATE :2006/02/15 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction ...
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Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the ...