BST39 Zetex Semiconductors plc., BST39 Datasheet
BST39
Manufacturer Part Number
BST39
Description
Bst39 - Silicon Planar High Voltage Transistor
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.BST39.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BST39
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BST39,115
Manufacturer:
NXP
Quantity:
18 856
Company:
Part Number:
BST39TA
Manufacturer:
Diodes/Zetex
Quantity:
33 441
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – JUNE 1996
FEATURES
*
*
COMPLEMENTARY TYPE –
PARTMAKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
For typical characteristics graphs see FMMT458 datasheet.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Output Capacitance
Input Capacitance
Transition Frequency
Fast Switching
High h
FE
.
amb
=25°C
BST16
AT1
SYMBOL
V
V
V
I
V
V
h
C
C
f
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
MIN.
400
350
5
40
70
3 - 77
amb
SYMBOL
V
V
V
I
I
P
T
CM
C
= 25°C unless otherwise stated).
tot
j
CBO
CEO
EBO
:T
MAX.
20
0.5
1.3
2
20
stg
UNIT
V
V
V
nA
V
V
pF
pF
MHz
2%
-65 to +150
VALUE
400
350
500
5
1
1
CONDITIONS.
I
I
I
V
I
I
I
V
V
I
f=5MHz
C
C
E
C
C
C
C
=10 A
=1mA*
=10 A
CB
=50mA, I
=50mA, I
=20mA, V
CB
EB
=10mA, V
=300V
=10V, f=1MHz
=10V, f=1MHz
C
BST39
SOT89
B
B
B
CE
CE
=4mA
=4mA
=10V*
=10V,
UNIT
C
mA
°C
W
V
V
V
A
E
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