zxmn10a08gta Zetex Semiconductors plc., zxmn10a08gta Datasheet

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zxmn10a08gta

Manufacturer Part Number
zxmn10a08gta
Description
100v Sot223 N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
ZXMN10A08G
100V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
10A08
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
Device
ZXMN10A08GTA
V
100
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
0.250 @ V
0.300 @ V
R
Reel size
(inches)
DS(on)
7
GS
GS
( )
= 10V
= 6V
Tape width
(mm)
12
I
D
2.9
2.6
(A)
1
Quantity
per reel
1,000
D
Pinout - top view
www.zetex.com
G
S
D
D
G
S

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zxmn10a08gta Summary of contents

Page 1

... Low threshold • SOT223 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN10A08GTA 7 Device marking ZXMN 10A08 Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 2 2.6 GS ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at T =25°C amb ...

Page 3

Thermal characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ZXMN10A08G 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*) (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ZXMN10A08G 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 1 - June 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN10A08G www.zetex.com ...

Page 8

Package outline - SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas ...

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