SI7469DP Vishay, SI7469DP Datasheet - Page 4

• Manufacturer Part Number: SI7469DP
• Description: P-channel 80-v D-s Mosfet
• Manufacturer: Vishay

Si7469DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
40
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
T
0.4
J
= 150 °C
25
- Temperature (°C)
50
0.6
I
D
75
= 250
0.001
0.8
0.01
100
0.1
10
T
100
1
µA
J
0.1
= 25 °C
*Limited by
r
Safe Operating Area, Junction-to-Ambient
DS(on)
1.0
*V
125
GS
> minimum V
New Product
V
150
1.2
DS
1
- Drain-to-Source Voltage (V)
Single Pulse
T
A
GS
= 25 °C
at which r
10
DS(on)
0.05
0.04
0.03
0.02
0.01
100
35
30
25
20
15
10
is specified
5
0
0.01
2
100 µs
1 ms
10 ms
100 ms
1 s
10 s
dc
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
3
1000
0.1
V
4
GS
- Gate-to-Source Voltage (V)
5
Time (sec)
1
6
T
S-71596-Rev. B, 30-Jul-07
Document Number: 73438
A
T
A
= 125 °C
= 25 °C
10
7
8
100
9
1000
10