OPE5594S Roithner LaserTechnik GmbH, OPE5594S Datasheet

OPE5594S

Manufacturer Part Number

OPE5594S

Description

Gaalas Infrared Emitter

Manufacturer

Roithner LaserTechnik GmbH

Datasheet

1.OPE5594S.pdf (2 pages)

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GaAlAs Infrared Emitter C C C C

that is designed for high reliability, high radiant intensity and

low forward voltage .This device is optimized for efficiency

at emission wavelength 940nm and has a high radiant

efficiency over a wide range of forward current.

This device is packaged T1-

and has medium beam angle with lensed package

and cup frame.

FEATURESC

• High-output powerC

• Medium beam angle

• High reliability and long term stability

• Available for pulse operating

APPLICATIONSC

• Optical emitters

• Optical switches

• Smoke sensors

• IR remote control

• IR sound transmission

STORAGE

• Condition : 5°C~35°C,R.H.60%

• Terms : within 3 months from production date

• Remark : Once the package is opened, the products should be used within a day.

* Please take proper steps in order to secure reliability and safety in required conditions and

MAXIMUM RATINGSC C

ELECTRO-OPTICALCHARACTERISTICS

The OPE5594S is GaAlAs infrared emitting diode

.Duty ratio = 1/100, pulse width=0.1ms.

.Lead Soldering Temperature (2mm from case for 5sec.).

environments for this device.

Forward voltage

Reverse current

Capacitance

Radiant intensity

Peak emission wavelength

Spectral bandwidth 50%

Half angle

Power Dissipation

Forward current

Pulse forward current

Reverse voltage

Operating temp.

Soldering temp.

Otherwise, it should be keeping in a damp proof box with desiccants.

Item

CCCCCCCCCCCCCCC 2

CCCCCC

3/4

plastic package

Symbol

Topr.

Tsol.

FPC

Symbol

OPE5594S

CCCCCCCCCCCCCCCCC(Ta=25°C )

-25~ +85

Rating

260.

150

100

1.0

5.0

f = 1MHz

Conditions

=100mA

= 100mA

=100mA

= 5V

DIMENSIONS (Unit:mm)

Unit

°CC

Min.

2- 0.5

Tolerance : ±0.2mm

Typ.

940

±10

1.4

Anode

Cathode

2.5

Max.

1.7

(Ta=25°C)

mW/

Unit

deg.

µA

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OPE5594S Summary of contents

Page 1

... GaAlAs Infrared Emitter The OPE5594S is GaAlAs infrared emitting diode that is designed for high reliability, high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. ...

Page 2

... ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY -40° -50° -60° -70° -80° -90° 1.0 1.4 1.5 1.6 (V) 44 OPE5594S 100 200 500 Forward Current IF(mA) 850 900 950 1000 1050 Emission Wavelength (nm) 0° 10° -10° 20° -20° 30° -30° 40° 0.5 0 0.5 Relative Radiant intensity Ta=25 50° ...

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