OPE5294WK Roithner LaserTechnik GmbH, OPE5294WK Datasheet

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OPE5294WK

Manufacturer Part Number
OPE5294WK
Description
Gaalas Infrared Emitter
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
GaAlAs Infrared Emitter C C C C
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-
and has medium beam angle with lensed package
and cup frame.
FEATURESC
• High-output powerC
• Medium beam angle
• Available for pulse operating
APPLICATIONSC
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
MAXIMUM RATINGSC C
ELECTRO-OPTICALCHARACTERISTICS
C
1
2
The OPE5294WK is GaAlAs infrared emitting diode
for this device.
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead Soldering Temperature (2mm from case for 5sec.).
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Power Dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
C
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
CCCCCCCCCCCCCC 2
CCCC 1C
3/4
plastic package
Symbol
C
Topr.
Tsol.
I
V
P
OPE5294WK
I
FPC
FC
DC
RC
Symbol
V
Ct
I
Ie
CCCCCCCCCCCCCCCCC(Ta=25°C )
R

F
p
-25~ +85
31
Rating
260.
150
100
1.0
5.0
I
V
f = 1MHz
I
I
I
I
Conditions
F
F
F
F
F
=100mA
= 50mA
= 50mA
=100mA
R
=100mA
= 5V
DIMENSIONS (Unit : mm)
Unit
2- 0.5
°CC
°CC
AC
Min.
EC
C
C
Tolerance : ±0.2mm
Typ.
940
±22
1.4
20
40
45
Anode
Cathode
2.5
Max.
1.7
10
(Ta=25°C)
mW/
Unit
deg.
µA
nm
nm
pF
V

OPE5294WK Summary of contents

Page 1

... GaAlAs Infrared Emitter The OPE5294WK is GaAlAs infrared emitting diode that is designed for high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1- ...

Page 2

... ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY -40° -50° -60° -70° -80° -90° 1.0 1.4 1.5 1.6 (V) 32 OPE5294WK 100 200 500 Forward Current IF(mA) 850 900 950 1000 1050 Emission Wavelength (nm) 0° 10° -10° 20° -20° 30° -30° 40° 0.5 0 0.5 Relative Radiant intensity Ta=25 50° ...

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