OPE5294WKR2 Roithner LaserTechnik GmbH, OPE5294WKR2 Datasheet
OPE5294WKR2
Related parts for OPE5294WKR2
OPE5294WKR2 Summary of contents
Page 1
... GaAlAs Infrared Emitter The OPE5294WKR2 is GaAlAs infrared emitting diode that is designed for high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 black plastic package and has medium beam angle with lensed package and cup frame ...
Page 2
... RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP 0.8 0.5 0.3 0.2 0.1 - Ambient Temperature Ta FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Ta=25 1.0 1.1 1.2 1.3 Forward Voltage V F OPE5294WKR2 RADIANT INTENSITY Vs. FORWARD CURRENT. 400 Ta=25 Ta=25 200 100 0.5 0.3 0 100 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. 1.0 I =50mA Ta=25 F 0.8 0.6 0.4 0.2 0.0 60 ...