FSL110R Intersil Corporation, FSL110R Datasheet

FSL110R

Manufacturer Part Number

FSL110R

Description

3.5a, 100v, 0.600 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets

Manufacturer

Intersil Corporation

Datasheet

1.FSL110R.pdf (8 pages)

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3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR

Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

Formerly available as type TA17616.

10K

100K

RAD LEVEL

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL

4-1

Data Sheet

PART NUMBER/BRAND

FSL110D1

FSL110D3

FSL110R1

FSL110R3

FSL110R4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 3.5A, 100V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Symbol

Package

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 0.3nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 3E14 Neutrons/cm

for 3E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

October 1998

DS(ON)

FSL110D, FSL110R

= 0.600

TO-205AF

File Number 4224.3

Intersil Corporation 1999

with

DSS

Related parts for FSL110R

FSL110R Summary of contents

Page 1

... Photo Current - 0.3nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Speciﬁcations for 3E13 Neutrons/cm - Usable to 3E14 Neutrons/cm Symbol Package CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 FSL110D, FSL110R File Number 4224.3 = 0.600 2 with DSS ...

Page 2

... 12V g(12 g(TH 3.5A 15V (PLATEAU 25V 0V, ISS 1MHz C OSS C RSS FSL110D, FSL110R 100 DS 100 DGR 3.5 D 2 0.12 10.5 AS 3 -55 to 150 J STG 300 L MIN TYP 100 - -55 ...

Page 3

... FLUENCE = 1E5 IONS/cm (TYPICAL) 100 TEMP = -10 -15 V (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 4-3 FSL110D, FSL110R TEST CONDITIONS 3.5A, dI /dt = 100A Unless Otherwise Speciﬁed C SYMBOL TEST CONDITIONS ...

Page 4

... V G CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 4-4 FSL110D, FSL110R Unless Otherwise Speciﬁed (Continued) 100 10 1 0.1 100 150 0. FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 2.0 1.5 1.0 0.5 0.0 -80 FIGURE 6. NORMALIZED r NOTES: DUTY FACTOR ...

Page 5

... TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT V = 12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT 4-5 FSL110D, FSL110R Unless Otherwise Speciﬁed (Continued (L/R) ln [(I *R) / (1.3 RATED ( (1.3 RATED STARTING STARTING T = 150 C ...

Page 6

... Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance 4-6 FSL110D, FSL110R SYMBOL TEST CONDITIONS 20V GSS ...

Page 7

... Rad Hard “S” Equivalent - Standard Data Package A. Certiﬁcate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 4-7 FSL110D, FSL110R E. Preconditioning Attributes Data Sheet F. Group A G. Group B H. Group C I. Group D 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certiﬁ ...

Page 8

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Ofﬁce Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 4-8 FSL110D, FSL110R SYMBOL P A Øb SEATING ØD PLANE ØD ...

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