FSL230R Intersil Corporation, FSL230R Datasheet

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FSL230R

Manufacturer Part Number
FSL230R
Description
5a, 200v, 0.460 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets
Manufacturer
Intersil Corporation
Datasheet
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 5A, 200V, r
• Total Dose
• Single Event
• Dose Rate
• Photo Current
• Neutron
Ordering Information
Formerly available as type
Package
10K
10K
100K
100K
100K
RAD LEVEL
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
- 3.0nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications
- Usable to 1E14 Neutrons/cm
V
V
for 1E13 Neutrons/cm
DS
GS
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS(ON)
Commercial
TXV
Commercial
TXV
Space
SCREENING LEVEL
= 0.460
TA17637
2
|
Copyright
.
2
PART NUMBER/BRAND
FSL230D1
FSL230D3
FSL230R1
FSL230R3
FSL230R4
©
Intersil Corporation 1999
FSL230D, FSL230R
2
with
SEGR Resistant, N-Channel Power MOSFETs
DSS
DM
TO-205AF
D
3-35
G
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
S
5A, 200V, 0.460 Ohm, Rad Hard,
G
D
S
File Number
4032.3

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FSL230R Summary of contents

Page 1

... Package CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright FSL230D, FSL230R SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- ically designed for commercial and military space applica- tions ...

Page 2

... g(TH 5A 15V (PLATEAU 25V 0V, ISS 1MHz C OSS C RSS 3-36 FSL230D, FSL230R UNITS 200 DS 200 DGR 0. -55 to 150 J STG 300 L MIN ...

Page 3

... RANGE = 36 240 FLUENCE = 1E5 IONS/cm 200 160 120 TEMP = -10 -15 V (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FSL230D, FSL230R TEST CONDITIONS 5A, dI /dt = 100A Unless Otherwise Specified C SYMBOL TEST CONDITIONS ...

Page 4

... V G CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE FSL230D, FSL230R Unless Otherwise Specified (Continued OPERATION IN THIS AREA MAY BE LIMITED BY r 0.1 1 100 150 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2 ...

Page 5

... TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT V = 12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FSL230D, FSL230R Unless Otherwise Specified (Continued) STARTING T o STARTING T = 150 ( (1.3 RATED DSS ...

Page 6

... Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance FSL230D, FSL230R SYMBOL TEST CONDITIONS 20V GSS GS I ...

Page 7

... Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report FSL230D, FSL230R E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F ...

Page 8

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 FSL230D, FSL230R SYMBOL MIN A 0.160 Øb 0.016 ØD 0.350 Ø ...

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