Transistors
Digital Transistor
(Dual Digital Transistors for Inverter Drive)
EMD9 / UMD9N / IMD9A
1) DTA114Y and DTC114Y transistors are built-in a EMT
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Storage temperature
∗
∗
Basic ordering unit (pieces)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
PNP type negative symbols have been omitted.
∗
1 120mW per element must not be exceeded. PNP type negative symbols have been omitted.
2 200mW per element must not be exceeded. PNP type negative symbols have been omitted.
Equivalent circuit
Features
Package, marking, and packaging specifications
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
or UMT or SMT package.
Characteristics of built-in transistor.
DTr2
Parameter
Package
Marking
Type
Code
EMD9 / UMD9N
(3)
(4)
Parameter
R
R
2
1
(2)
(5)
EMD9, UMD9N
IMD9A
R
R
∗
1
2
(1)
(6)
DTr1
R
R
1
2
=10kΩ
=47kΩ
Symbol
EMD9
I
EMT6
8000
C (Max.)
Tstg
T2R
V
D9
V
Pd
I
Tj
CC
O
IN
Symbol
R
V
V
V
I
O(off)
150(TOTAL)
300(TOTAL)
R
2
−55 to +150
O(on)
G
I(off)
I(on)
f
/R
I
DTr2
T
I
−6 to +40
1
I
1
UMD9N
Limits
UMT6
100
150
IMD9A
3000
50
70
(4)
(3)
D9
TR
R
R
2
1
(5)
(2)
Min.
R
3.7
1.4
68
R
1
−
−
−
−
−
7
2
(6)
(1)
DTr1
IMD9A
SMT6
T108
3000
R
R
Typ.
D9
250
4.7
0.1
10
mW
mW
1
2
Unit
mA
mA
−
−
−
−
−
=10kΩ
=47kΩ
°C
°C
V
V
Max.
∗
∗
0.88
5.7
0.3
0.3
0.5
13
1
2
−
−
−
MHz
Unit
mA
mA
kW
V
V
−
−
V
V
I
V
V
I
V
O
O
CC
O
I
CC
CE
=5mA , I
=5mA , V
=5V
=0.3V , I
=5V , I
=50V , V
=10V , I
External dimensions (Unit : mm)
EMD9
ROHM : EMT6
UMD9N
ROHM : UMT6
EIAJ : SC-88
IMD9A
ROHM : SMT6
EIAJ : SC-74
O
I
=0.25mA
I
O
=100mA
=1mA
E
I
=5V
= −5mA , f=100MHz
=0V
Conditions
−
−
EMD9 / UMD9N / IMD9A
0.3to0.6
Abbreviated symbol : D9
Abbreviated symbol : D9
Abbreviated symbol : D9
0.1Min.
( 4 )
( 5 )
( 6 )
1.6
2.8
1.25
1.2
1.6
2.1
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Rev.B
1/3