DTD143TK ROHM Co. Ltd., DTD143TK Datasheet - Page 2

• Manufacturer Part Number: DTD143TK
• Description: Digital Transistors Built-in Resistor
• Manufacturer: ROHM Co. Ltd.

Transistors
Fig.1 DC current gain vs. collector current
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
Characteristics of built-in transistor
500
200
100
50
20
10
1k
500
5
2
1
1m
COLLECTOR CURRENT : I
2m
Parameter
Ta=100 C
−40 C
5m 10m
25 C
20m
50m
100m
C
V
(A)
CE
200m 500m
= 5V
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
T
CBO
CEO
EBO
1
∗
3.29
Min.
100
Fig.2 Collector-emitter saturation voltage
50
40
5
−
−
−
−
500m
200m
100m
50m
20m
10m
5m
2m
1m
500µ
1
Typ.
250
200
4.7
vs. collector current
−
−
−
−
−
−
Ta=100 C
1m
COLLECTOR CURRENT : I
−40 C
25 C
2m
Max.
6.11
600
0.5
0.5
0.3
−
−
−
−
5m 10m
MHz
Unit
µA
µA
kΩ
V
V
V
V
−
20m
50m
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
= 50µA
= 1mA
= 50µA
/I
100m
B
C
= 50V
= 4V
= 5V, I
= 10V, I
= 50mA/2.5mA
l
C
(A)
/l
200m 500m
B
=20
C
= 50mA
E
= −50mA, f = 100MHz
Conditions
−
Rev.B
DTD143TK
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