DTDG14GP ROHM Co. Ltd., DTDG14GP Datasheet - Page 2

• Manufacturer Part Number: DTDG14GP
• Description: Digital Transistor Built In Resistor And Zener Diode Driver 60v, 1a
• Manufacturer: ROHM Co. Ltd.

Transistors
∗ Characteristics of built-in transistor
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Electrical characteristics (Ta = 25°C)
Electrical characteristic curves
500m
200m
100m
50m
20m
10m
5m
2m
1m
100m 200m 500m
10
5
2
1
COLLECTOR TO EMITTER VOLTAGE : V
14
When mounted on glass epoxy
∗Single pulse
Fig.1
W
×18
l
×0.8
I
CP
t
(Unit : mm)
Parameter
Safe operating area
1
DC
2
5
10
20
50 100
CE
(V)
V
Symbol
BV
BV
BV
CE
I
I
h
500
200
100
CBO
EBO
10k
R
f
50
20
10
Fig.2 DC current gain vs. collector
5k
2k
1k
(sat)
FE
CBO
CEO
EBO
T
10m 20m 50m 100m200m500m 1
∗
COLLECTOR CURRENT : I
current
Min.
300
300
50
50
5
−
−
7
−
Typ.
V
10
80
−
−
−
−
−
−
−
CE
=5V
2V
1V
Max.
580
0.5
0.4
70
70
13
−
−
−
2
Ta=25°C
C
(A)
5
MHz
Unit
µA
µA
kΩ
V
V
V
V
−
10
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=50µA
=1mA
=720µA
/I
500m
200m
100m
B
50m
20m
10m
=40V
=4V
=2V, I
=5V, I
=500mA/5mA
10
Fig.3
10m
5
2
1
20m
I
C
E
C
/I
=500mA
=−0.1A, f=30MHz
COLLECTOR CURRENT : I
B
Collector-emitter saturation
voltage vs. collector current
=200
Conditions
50m 100m 200m 500m 1
100
50
−
Rev.A
DTDG14GP
2
Ta=25°C
C
(
A)
5
2/2
10