DAN217N3 Cystech Electonics Corp., DAN217N3 Datasheet
DAN217N3
Manufacturer Part Number
DAN217N3
Description
High-speed Diode
Manufacturer
Cystech Electonics Corp.
Datasheet
1.DAN217N3.pdf
(3 pages)
DAN217N3
HIGH-SPEED SWITCHING DIODE
Description
The DAN217N3 consists of two diodes in a plastic surface mount package. The diodes are
connected in series and the unit is designed for high-speed switching application in hybrid thick
and thin-film circuits.
Features
Absolute Maximum Ratings
Characteristics
DAN217N3
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Storage Temperature............................................................................................ -65 ~ +150 C
Junction Temperature .................................................................................................... +150 C
Total Power Dissipation (Ta=25 C) ................................................................................ 250 mW
Reverse Voltage .................................................................................................................. 70 V
Repetitive Reverse Voltage ................................................................................................. 70 V
Forward Current ............................................................................................................. 150 mA
Repetitive Forward Current ............................................................................................ 500 mA
Forward Surge Current (1ms)....................................................................................... 1000 mA
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
Characteristic
(Ta=25 C)
CYStech Electronics Corp.
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
CT
Trr
IR
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=70
VR=0, f=1MHz
IF=IR=10mA, RL=100
measured at IR=1mA
Condition
Min
CYStek Product Specification
70
Spec. No. : C303N3C
Issued Date : 2002.12.18
Revised Date :
Page No. : 1/3
-
-
-
-
-
-
-
1000
1250
Max
715
855
2.5
1.5
6
-
. .
Unit
mV
mV
mV
mV
uA
pF
nS
V
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DAN217N3 Summary of contents
Page 1
... DAN217N3 HIGH-SPEED SWITCHING DIODE Description The DAN217N3 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Features Small SMD Package (SOT-23) Ultra-high Speed Low Forward Voltage ...
Page 2
... Forward Biased Voltage-VF (mV) Power Derating 300 250 200 150 100 Ta Ambient Temperature DAN217N3 CYStech Electronics Corp. 0.1 1500 2000 100 120 140 160 Spec. No. : C303N3C Issued Date : 2002.12.18 Revised Date : Page No. : 2/3 Capacitance & Reverse-Biased Voltage 1 0 ...
Page 3
... CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DAN217N3 CYStech Electronics Corp. Diagram : ...