BTB1132M3 Cystech Electonics Corp., BTB1132M3 Datasheet
BTB1132M3
Related parts for BTB1132M3
BTB1132M3 Summary of contents
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... Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Junction Temperature Storage Temperature Note : *1 Single pulse, Pw=10ms *2 When mounted × 40 × 0.7mm ceramic board. BTB1132M3 CYStech Electronics Corp 0.5A /- 50mA C B Outline (Ta=25 C) Symbol VCBO VCEO VEBO ...
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... Characteristics (Ta=25 C) Symbol Min. BVCBO -40 BVCEO -32 BVEBO -5 ICBO - IEBO - *VCE(sat) - *hFE Cob - Classification of hFE Rank P Range 82~180 BTB1132M3 CYStech Electronics Corp. Typ. Max. Unit - - -0.5 µA - -0.5 µA -0.15 -0 390 - 150 - MHz 120~270 180~390 Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No ...
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... Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 VBESAT@IC=10IB 1000 100 0 Collector Current---IC(mA) BTB1132M3 CYStech Electronics Corp. 100 1000 10000 100 1000 10000 Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB ...
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... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1132M3 CYStech Electronics Corp ...