GI9T18 E-Tech Electronics LTD, GI9T18 Datasheet - Page 2

• Manufacturer Part Number: GI9T18
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: E-Tech Electronics LTD

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
G
I
9T18
2. Pulse width 300us, duty cycle 2%.
Parameter
Parameter
2
2
2
2
150 :
)
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
R
Q
T
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
g
r
f
rr
rr
/
Tj
Min.
Min.
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1115
1.54
Typ.
280
220
0.1
33
16
12
80
22
12
19
11
3
9
-
-
-
-
-
-
-
-
Max.
±100
1790
Max.
1.5
1.3
25
14
28
25
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
m
nC
nA
uA
uA
pF
nC
ns
ns
V
V
S
V
V
Reference to 25 : , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/ s
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=18A
=18A
=18A, V
=18A, V
=0.56
=3.3
=0, I
=V
=5V, I
= ±12V
=20V, V
=12V, V
=4.5V, I
=2.5V, I
=16V
=4.5V
=10V
=5V
=0V
=20V
Test Conditions
Test Conditions
ISSUED DATE :2005/04/06
REVISED DATE :
GS
D
, I
D
=250uA
GS
GS
=18A
D
D
D
GS
GS
=250uA
=0V
=0V
=18A
=9A
=0
=0
Page: 2/4
D
=1mA