VFT30-50 Advanced Semiconductor, Inc., VFT30-50 Datasheet

VFT30-50

Manufacturer Part Number

VFT30-50

Description

Vhf Power Mosfet N-channel Enhancement Mode

Manufacturer

Advanced Semiconductor, Inc.

Datasheet

1.VFT30-50.pdf (1 pages)

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DESCRIPTION:

The

General Purpose Class B Power

Amplifier Applications up to 250 MHz.

FEATURES:

MAXIMUM RATINGS

CHARACTERISTICS

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200

Omnigold™ Metalization System

SYMBOL

(BR)DSS

DGR

DISS

STG

VFT30-50

(BR)DSS

= 16 dB Typ. at 30 W /175 MHz

= 60% Typ. at 30 W /175 MHz

DSS

GSS

oss

iss

rss

115 W @ T

-65

f = 175 MHz

is Designed for

1.52

= 0 V

= 20 V

= 10 V

= 50 V

C to +200

C to +150

120 V

6.0 A

40 V

C/W

NONETEST CONDITIONS

= 25

N-Channel Enhancement Mode

VHF POWER MOSFET

= 100 mA

Specifications are subject to change without notice.

= 10 mA

= 2.5 A

= 10 mA

= 0 V

= 50 V

= 0 V

F = 1.0 MHz

OUT

= 30 W

PACKAGE STYLE .380 4L FLG

DIM

ORDER CODE: ASI10708

MINIMUM TYPICAL MAXIMUM

FAX (818) 765-3004

.785 / 19.94

.720 / 18.29

.970 / 24.64

.220 / 5.59

.004 / 0.10

.085 / 2.16

.160 / 4.06

.240 / 6.10

MINIMUM

inches / mm

125

800

1.0

---

.112 x 45°

30.0

115

6.5

---

.730 / 18.54

.980 / 24.89

MAXIMUM

.230 / 5.84

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

inches / mm

.125

Ø.125 NOM.

FULL R

100

1.0

5.0

VFT30-50

---

UNITS

1/1

REV. A

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