SI8435DB Vishay, SI8435DB Datasheet - Page 3

• Manufacturer Part Number: SI8435DB
• Description: P-channel 1.5-v G-s Mosfet
• Manufacturer: Vishay

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T
Document Number: 73559
S-72198-Rev. C, 22-Oct-07
SPECIFICATIONS T
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
15
12
9
6
3
0
0.0
0.6
V
DS
Output Characteristics
– Drain-to-Source V oltage (V)
V
GS
1.2
J
= 5 V thru 2 V
= 25 °C, unless otherwise noted
1.8
Symbol
V
V
I
Q
I
SM
t
t
t
GS
V = 10 V
SD
S
rr
a
b
GS
rr
= 1.5 V
A
2.4
= 25 °C, unless otherwise noted
I
F
= - 1 A, di/dt = 100 A/µs, T
3.0
New Product
I
S
Test Conditions
= - 1 A, V
T
C
= 25 °C
GS
= 0 V
J
= 25 °C
6
5
4
3
2
1
0
0.0
V
0.3
Min
GS
Transfer Characteristics
– Gate-to-Source V oltage (V)
0.6
Typ
116
203
0.6
45
71
Vishay Siliconix
0.9
Si8435DB
- 5.21
Max
- 15
174
305
1.2
www.vishay.com
1.2
Unit
nC
ns
ns
A
V
1.5
3