SI4900DY Vishay, SI4900DY Datasheet - Page 3
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SI4900DY
Manufacturer Part Number
SI4900DY
Description
Dual N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI4900DY.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4900DY
Manufacturer:
MOT
Quantity:
5 000
Company:
Part Number:
SI4900DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4900DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73272
S-80578-Rev. D, 17-Mar-08
0.080
0.075
0.070
0.065
0.060
0.055
0.050
0.045
0.040
20
18
16
14
12
10
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
6
4
2
0
0.0
0
0
V
GS
0.2
2
V
I
D
= 10 thru 4 V
DS
= 4.3 A
0.4
4
= 30 V
V
3
V
GS
DS
Output Characteristics
0.6
= 4.5 V
Q
- Drain-to-Source Voltage (V)
6
I
g
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
0.8
8
6
1.0
10
3 V
1.2
12
9
V
1.4
14
GS
= 10 V
1.6
16
12
1.8
18
2.0
20
15
1000
800
600
400
200
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
0.5
D
GS
10
= 4.3 A
V
V
= 10 V
DS
Transfer Characteristics
GS
C
0
T
1.0
oss
- Drain-to-Source Voltage (V)
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
20
Capacitance
25
1.5
30
50
Vishay Siliconix
T
C
2.0
C
= 125 °C
iss
25 °C
75
Si4900DY
40
2.5
www.vishay.com
100
50
3.0
125
- 55 °C
3.5
150
60
3