SI4900DY Vishay, SI4900DY Datasheet - Page 4
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SI4900DY
Manufacturer Part Number
SI4900DY
Description
Dual N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI4900DY.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4900DY
Manufacturer:
MOT
Quantity:
5 000
Company:
Part Number:
SI4900DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4900DY-T1-E3
Manufacturer:
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Quantity:
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Si4900DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
T
J
50
= 150 °C
0.8
I
D
75
= 250 µA
0.001
0.01
100
T
0.1
10
1.0
J
1
100
0.1
= 25 °C
Limited by
* V
1.2
125
GS
Single Pulse
T
A
> minimum V
= 25 °C
V
1.4
150
R
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
*
GS
at which R
DS(on)
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
10
25
20
15
10
5
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
1 ms
10 ms
100 ms
1 s
10 s
DC
100 µs
2
V
100
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S-80578-Rev. D, 17-Mar-08
Document Number: 73272
10
6
I
D
= 4.3 A
100
8
1000
10