SI1417EDH Vishay, SI1417EDH Datasheet - Page 2

• Manufacturer Part Number: SI1417EDH
• Description: P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Si1417EDH
Vishay Siliconix
Notes
a.
b.
www.vishay.com
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
8
6
4
2
0
b
0
Parameter
Gate-Current vs. Gate-Source Voltage
3
a
a
V
GS
a
– Gate-to-Source Voltage (V)
6
a
9
_
Symbol
12
V
r
I
DS(on)
DS(on)
t
t
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
SD
t
t
fs
gs
gd
r
f
g
_
15
18
New Product
V
I
V
DS
D
DS
^ –1 A, V
= –6 V, V
V
V
= –9.6 V, V
V
V
V
V
V
DS
V
DS
V
DS
GS
GS
GS
I
DS
DS
DS
V
V
S
Test Condition
= 0 V, V
DD
DD
= 0 V, V
= –1.4 A, V
= –5 V, V
= –2.5 V, I
= –1.8 V, I
= V
= –4.5 V, I
= –10 V, I
= –9.6 V, V
= –6 V, R
= –6 V, R
GEN
GS
GS
GS
, I
GS
= –4.5 V, I
GS
= –4.5 V, R
D
GS
= 0 V, T
D
= "4.5 V
D
D
= –250 mA
= "12 V
D
GS
L
L
GS
= –3.3 A
= –3.3 A
= –2.9 A
= –1.0 A
= –4.5 V
= 6 W
= 6 W
= 0 V
10,000
= 0 V
1,000
0.01
D
J
100
0.1
G
10
= 85_C
= –3.3 A
1
= 6 W
0
T
Gate Current vs. Gate-Source Voltage
J
= 150_C
V
GS
3
–0.45
Min
–4
– Gate-to-Source Voltage (V)
T
J
= 25_C
0.070
0.095
0.133
–0.80
Typ
0.60
6
5.8
1.3
1.5
1.4
4.9
4.9
8
S-03187—Rev. A, 05-Mar-01
Document Number: 71412
Max
0.085
0.115
0.160
"1.5
"10
–1.1
1.0
2.1
7.5
7.5
–1
–5
8
9
Unit
mA
mA
m
mA
nC
m
ms
V
A
W
S
V
12