SI1417EDH Vishay, SI1417EDH Datasheet - Page 4

• Manufacturer Part Number: SI1417EDH
• Description: P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Si1417EDH
Vishay Siliconix
www.vishay.com
4
–0.1
–0.2
0.01
0.4
0.3
0.2
0.1
0.0
0.1
0.1
10
1
2
1
–50
10
0
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
V
0.3
SD
T
J
0
= 150_C
– Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
10
– Temperature (_C)
= 250 mA
25
–3
0.6
50
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
75
T
10
J
= 25_C
100
–2
1.2
_
125
Square Wave Pulse Duration (sec)
150
1.5
New Product
10
–1
1
0.25
0.20
0.15
0.10
0.05
0.00
35
28
21
14
0.001
7
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
V
GS
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
– Gate-to-Source Voltage (V)
DM
JM
2
– T
t
A
Time (sec)
1
= P
t
2
0.1
DM
3
Z
thJA
I
100
thJA
D
t
t
1
2
= –3.3 A
(t)
S-03187—Rev. A, 05-Mar-01
= 100_C/W
Document Number: 71412
4
1
600
5
10
6