SUM09N20-270 Vishay, SUM09N20-270 Datasheet

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SUM09N20-270

Manufacturer Part Number
SUM09N20-270
Description
N-channel 200-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
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Part Number:
SUM09N20-270
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SUM09N20-270
Manufacturer:
ST
0
Notes
a.
b.
c.
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
Ordering Information: SUM09N20-270
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
V
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
200
200
G
Top View
TO-263
(V)
D
S
J
J
a
a
a
= 175_C)
= 175_C)
N-Channel 200-V (D-S) 175_C MOSFET
c
0.270 @ V
Parameter
Parameter
0.300 @ V
r
DS(on)
GS
GS
(W)
= 10 V
= 6 V
G
T
L = 0.1 mH
T
T
T
C
A
N-Channel MOSFET
C
C
C
= 125_C
= 25_C
= 25_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
New Product
D
c
S
I
D
8.5
9
(A)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
GS
DS
AR
D
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
- 55 to 175
Limit
Limit
"20
2.45
3.75
200
60
5.2
2.5
10
40
SUM09N20-270
9
7
b
Vishay Siliconix
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUM09N20-270 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) r (BR)DSS DS(on) 0.270 @ V GS 200 200 0.300 @ V GS TO-263 Top View Ordering Information: SUM09N20-270 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a a ...

Page 2

... SUM09N20-270 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 0.5 0.4 25_C 125_C 0.3 0.2 0.1 0 160 200 0 SUM09N20-270 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...

Page 4

... SUM09N20-270 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature (_C) J www.vishay.com 4 New Product 100 10 1 100 125 150 175 0 Drain Source Breakdown vs. Junction Temperature 240 230 220 210 200 ...

Page 5

... Document Number: 72158 S-03414—Rev. A, 03-Mar-03 New Product 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUM09N20-270 Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 100 V - Drain-to-Source Voltage (V) ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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