SUM09N20-270-E3 Vishay, SUM09N20-270-E3 Datasheet

MOSFET N-CH 200V 9A D2PAK

SUM09N20-270-E3

Manufacturer Part Number
SUM09N20-270-E3
Description
MOSFET N-CH 200V 9A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM09N20-270-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
580pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
300mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM09N20-270-E3
SUM09N20-270-E3TR
Notes
a.
b.
c.
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
Ordering Information: SUM09N20-270
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
V
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
200
200
G
Top View
TO-263
(V)
D
S
J
J
a
a
a
= 175_C)
= 175_C)
N-Channel 200-V (D-S) 175_C MOSFET
c
0.270 @ V
Parameter
Parameter
0.300 @ V
r
DS(on)
GS
GS
(W)
= 10 V
= 6 V
G
T
L = 0.1 mH
T
T
T
C
A
N-Channel MOSFET
C
C
C
= 125_C
= 25_C
= 25_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
New Product
D
c
S
I
D
8.5
9
(A)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
GS
DS
AR
D
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
- 55 to 175
Limit
Limit
"20
2.45
3.75
200
60
5.2
2.5
10
40
SUM09N20-270
9
7
b
Vishay Siliconix
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUM09N20-270-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) r (BR)DSS DS(on) 0.270 @ V GS 200 200 0.300 @ V GS TO-263 Top View Ordering Information: SUM09N20-270 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a a ...

Page 2

... SUM09N20-270 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V - Drain-to-Source Voltage (V) DS Document Number: 72158 S-03414—Rev. A, 03-Mar-03 New Product 0.5 0.4 25_C 125_C 0.3 0.2 0.1 0 160 200 0 SUM09N20-270 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current Drain Current (A) D Gate Charge V = 100 ...

Page 4

... SUM09N20-270 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature (_C) J www.vishay.com 4 New Product 100 10 1 100 125 150 175 0 Drain Source Breakdown vs. Junction Temperature 240 230 220 210 200 190 180 ...

Page 5

... Single Pulse 0. Document Number: 72158 S-03414—Rev. A, 03-Mar-03 New Product 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUM09N20-270 Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 100 V - Drain-to-Source Voltage ( 100 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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