SUM09N20-270-E3 Vishay, SUM09N20-270-E3 Datasheet - Page 2

• Manufacturer Part Number: SUM09N20-270-E3
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM09N20-270-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM09N20-270-E3; SUM09N20-270-E3TR

SUM09N20-270
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
g
Parameter
a
c
c
c
c
c
a
a
a
a
J
=25_C UNLESS OTHERWISE NOTED)
Symbol
V
I
RM(REC)
V
r
r
(BR)DSS
I
DS(
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
R
I
Q
Q
g
SM
I
t
oss
t
rss
t
SD
iss
S
rr
fs
gs
gd
r
G
f
rr
g
)
New Product
C
V
V
I
V
D
V
DS
DS
V
V
= 25_C)
DS
DS
GS
^ 10 A, V
GS
GS
= 160 V, V
= 160 V, V
= 100 V, V
I
V
= 0 V, V
F
F
V
V
V
V
V
= 10 V, I
= 10 V, I
V
DS
DS
DS
DD
DD
= 10 A, di/dt = 100 A/ms
DS
V
Test Condition
V
I
DS
V
F
GS
DS
GS
= 10 A, V
= 0 V, V
= V
= 160 V, V
= 100 V, R
= 100 V, R
w 5 V, V
= 0 V, I
b
,
= 10 V, I
= 15 V, I
GEN
= 6 V, I
DS
,
GS
D
D
GS
GS
GS
GS
= 5 A, T
= 5 A, T
= 25 V, f = 1 MHz
, I
= 10 V, R
GS
= 0 V, T
= 0 V, T
D
D
= 10 V, I
GS
GS
= 250 mA
D
= 250 mA
D
D
GS
L
L
= "20 V
= 5 A
= 5 A
= 5 A
= 10 V
= 10 W
= 10 W
= 0 V
J
J
= 0 V
,
J
J
= 125_C
= 175_C
G
D
D
= 125_C
= 175_C
= 2.5 W
m
= 10 A
Min
200
10
2
0.216
0.240
Typ
0.25
580
100
2.7
4.0
0.9
15
75
30
10
35
25
40
11
4
5
S-03414—Rev. A, 03-Mar-03
Document Number: 72158
"100
Max
0.270
0.300
0.54
0.71
250
150
1.5
0.6
50
17
15
55
40
60
10
4
1
9
8
Unit
nA
mA
m
pF
nC
mC
ns
ns
ns
W
W
W
V
V
A
S
A
A
V
A