VN0104 Supertex, Inc., VN0104 Datasheet

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VN0104

Manufacturer Part Number
VN0104
Description
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet

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Supertex
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VN0104
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NS
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Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifi ers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN0104
Device
ISS
and fast switching speeds
Package Option
VN0104N3-G
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FET
-55
O
C to +150
300
Value
BV
BV
±20V
DGS
DSS
O
O
BV
C
C
DSS
(V)
40
/BV
Pin Confi guration
Product Marking
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
DGS
Y Y W W
0104
VN
R
(max)
DS(ON)
3.0
YY = Year Sealed
WW = Week Sealed
(Ω)
DRAIN
TO-92 (N3)
TO-92 (N3)
= “Green” Packaging
SOURCE
GATE
VN0104
I
(min)
D(ON)
2.0
(A)

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VN0104 Summary of contents

Page 1

... BV /BV DSS DGS (V) 40 Pin Confi guration Value BV DSS BV DGS ±20V +150 C Product Marking O 300 C R DS(ON) (max) (Ω) 3.0 SOURCE DRAIN GATE TO-92 (N3 Year Sealed 0104 WW = Week Sealed “Green” Packaging TO-92 (N3) VN0104 I D(ON) (min) (A) 2.0 ...

Page 2

... V = 25V 1.0MHz 8.0 5 25V, 8 1.0A 25Ω GEN 8 PULSE OUTPUT R GEN D.U.T. INPUT VN0104 † DRM (mA) (A) 350 2.0 = 1.0mA = 1.0mA = 1.0mA = Max Rating = 125°C = 25V DS = 25V DS = 250mA D = 1.0A = 1.0A = 500mA = 1.0A = 1.0A ...

Page 3

... Typical Performance Curves ° ° ° ° 3 VN0104 ° ° ...

Page 4

... RSS On-Resistance vs. Drain Current 10V 0.5 1.0 1.5 2.0 I (amperes and R Variation with Temperature (th 10V, 1. 1mA (th 5V, 0.25A DS - 100 T (°C) j Gate Drive Dynamic Characteristics V = 10V DS 8 40V 0.2 0.4 0.6 0.8 Q (nanocoulombs) G VN0104 2.5 1.9 1.6 1.3 1.0 0.7 0.4 150 1.0 ...

Page 5

... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN0104 A102907 Side View ...

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