FLX107MH-12 Eudyna Devices Inc, FLX107MH-12 Datasheet

FLX107MH-12

Manufacturer Part Number

FLX107MH-12

Description

X, Ku Band Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLX107MH-12.pdf (4 pages)

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FLX107MH-12

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Edition 1.1

August 1999

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

CASE STYLE: MH

FEATURES

• High Output Power: P 1dB = 30.0dBm(Typ.)

• High Gain: G 1dB = 7.5dB(Typ.)

• High PAE: add = 33%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLX107MH-12 is a power GaAs FET that is designed for general

purpose applications in the X-Band frequency range as it provides

superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 500 .

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

R th

Symbol

g m

V p

add

V GS

V DS

T stg

T ch

P T

Channel to Case

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 250mA

V DS = 5V, I DS = 20mA

I GS = -20µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 12.5 GHz

Test Conditions

Condition

T c = 25°C

X, Ku Band Power GaAs FET

Min.

29.0

-1.0

FLX107MH-12

6.5

-5

-65 to +175

Rating

Limit

Typ.

175

30.0

7.5

400

200

-2.0

7.5

-5

G.C.P.: Gain Compression Point

Max.

-3.5

600

°C/W

dBm

Unit

°C

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FLX107MH-12 Summary of contents

Page 1

... High PAE: add = 33%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH- power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLX107MH- Band Power GaAs FET POWER DERATING CURVE 100 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER f = 12.5GHz I DS 0.6 I DSS V DS =10V V DS =8. out add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 ...

Page 3

... Download S-Parameters, click here 3 FLX107MH- Band Power GaAs S 21 +90° 14GHz 9 14GHz 8 .02 .04 .06 .08 0° SCALE FOR | ...

Page 4

... FLX107MH- Band Power GaAs FET 2-Ø1.8±0.15 (0.071) 4 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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