STZ6.8N ROHM Co. Ltd., STZ6.8N Datasheet

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STZ6.8N

Manufacturer Part Number
STZ6.8N
Description
Zener Diode
Manufacturer
ROHM Co. Ltd.
Datasheet

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Diodes
Zener diode
STZ6.8N
Voltage regulation
(Anode common twin type)
1) Small mold type. (SMD3)
2) High reliability.
Silicon epitaxial planar
Pow
Junction temperature
Storage temperature
(*1) T
Zener voltage
Reverse current
Dy
Zener impedance
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
namic impedance
er dissipation (*1)
otal of 2 elements
Parameter
Parameter
Symbol
Z
V
Z
3.2±0.1
4.0±0.1
I
R
Zk
Z
Z
External dimensions (Unit : mm)
Taping specification (Unit : mm)
Symbol
0.4
2.0±0.05
Tstg
 -0.05
+0.1
Tj
P
(2)
0.95
6.47
Min.
2.9±0.2
1.9±
-
-
-
各リードとも
Each lead has same dimension
同寸法
0.2
(3)
0.95
4.0±0.1
(1)
Typ.
φ1.5±0.1
      0
-
-
-
-
JEDEC :S0T-346
JEITA : SC-59
-55 to +150
ROHM : SMD3
Limits
0.15
week code
Max.
7.14
0.50
200
150
1.1±0.2
0.8±0.1
+0.1
-0.06
40
60
0.01
φ1.05MIN
0~0.1
Unit
µA
Ω
Ω
V
Land size figure (Unit : mm)
SMD3
Structure
0.8MIN.
Unit
m
I
V
I
I
Z
Z
Z
0.95
W
=5mA
R
=5mA
=0.5mA
=3.5V
1.9
Conditions
Rev.A
0.3±0.1
1.35±0.1
STZ6.8N
1/2

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STZ6.8N Summary of contents

Page 1

... Limits Symbol P 200 150 Tj -55 to +150 Tstg Min. Typ. Max. V 6. STZ6.8N Land size figure (Unit : mm) 1.9 0.95 0.8MIN. 0~0.1 SMD3 Structure 0.3±0.1 1.35±0.1 Unit m W ℃ ℃ Conditions Unit V I =5mA Z V =3.5V µA R Ω I =5mA Z Ω I =0.5mA Z Rev ...

Page 2

... AVE:0.120nA 0.3 0.2 0 DISRESION MAP 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA 10 time 1ms 300us 1 10 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS STZ6.8N 100 f=1MHz REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Ta=25℃ 19 f=1MHz 18 VR=0V n=10pcs 17 AVE:18.10pF ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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