MMFT1N10E ON Semiconductor, MMFT1N10E Datasheet - Page 2

• Manufacturer Part Number: MMFT1N10E
• Description: Medium Power Field Effect Transistor
• Manufacturer: ON Semiconductor

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage, (V
Zero Gate Voltage Drain Current, (V
Gate−Body Leakage Current, (V
Gate Threshold Voltage, (V
Static Drain−to−Source On−Resistance, (V
Drain−to−Source On−Voltage, (V
Forward Transconductance, (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Forward On−Voltage
Forward Turn−On Time
Reverse Recovery Time
DS
Characteristic
= V
DS
GS
GS
GS
= 10 V, I
= 20 V, V
DS
= 10 V, I
, I
D
= 100 V, V
(T
= 1 mA)
GS
A
D
GS
V
= 25°C unless otherwise noted)
= 0, I
D
= 0.5 A)
DS
GS
(1)
(V
See Figures 15 and 16
= 10 V, I
(V
= 1 A)
= 0)
DD
I
dl
= 10 V, R
DS
I
S
D
R
S
GS
S
V
= 1 A, V
GS
= 250 μA)
(V
/dt = 400 A/μs,
= 25 V, I
= 1 A, V
GS
f = 1 MHz)
= 80 V, I
V
= 0)
V
DS
R
= 25 ohms)
D
GS
= 10 Vdc)
= 50 V
http://onsemi.com
= 20 V,
= 0.5 A)
= 0,
G
GS
GS
D
= 50 ohms,
D
= 0.5 A
= 1 A,
= 0
= 0,
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
DS(on)
DS(on)
C
V
GS(th)
C
Q
Q
g
d(on)
d(off)
DSS
GSS
Q
t
t
on
FS
oss
t
t
SD
iss
rss
gd
rr
gs
r
f
g
Min
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
Limited by stray inductance
Typ
410
145
2.2
1.3
3.2
0.8
55
15
15
30
32
90
—
—
—
—
—
—
7
Max
0.25
0.33
100
4.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ohms
mhos
μAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
pF
ns
ns