MMFT1N10E ON Semiconductor, MMFT1N10E Datasheet - Page 9
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MMFT1N10E
Manufacturer Part Number
MMFT1N10E
Description
Medium Power Field Effect Transistor
Manufacturer
ON Semiconductor
Datasheet
1.MMFT1N10E.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMFT1N10ET3
Manufacturer:
ON
Quantity:
56 000
200°C
150°C
100°C
50°C
PREHEAT
ZONE 1
STEP 1
TIME (3 TO 7 MINUTES TOTAL)
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 2
SOAK"
VENT
150°C
Figure 18. Typical Solder Heating Profile
100°C
ZONES 2 & 5
DESIRED CURVE FOR LOW
HEATING
http://onsemi.com
STEP 3
RAMP"
MASS ASSEMBLIES
160°C
9
ZONES 3 & 6
140°C
HEATING
STEP 4
SOAK"
SOLDER IS LIQUID FOR
MASS OF ASSEMBLY)
170°C
40 TO 80 SECONDS
ZONES 4 & 7
(DEPENDING ON
HEATING
STEP 5
SPIKE"
T
MAX
STEP 6
VENT
COOLING
PEAK AT
SOLDER
205° TO
STEP 7
219°C
JOINT