VI40100C Vishay, VI40100C Datasheet - Page 2

• Manufacturer Part Number: VI40100C
• Description: Dual High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

V40100C, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Instantaneous forward voltage per diode
Reverse current at rated V
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
A
= 25 °C unless otherwise noted)
50
40
30
20
10
0
0
Figure 1. Forward Current Derating Curve
25
50
VF40100C
Case Temperature (°C)
V40100C-E3/4W
VF40100C-E3/4W
VB40100C-E3/4W
VB40100C-E3/8W
VI40100C-E3/4W
R
75
PREFERRED P/N
per diode
100
VI40100C
(2)
125
(1)
VB40100C
V40100C
at I
at I
at V
at V
150
SYMBOL
I
I
I
I
F
F
F
F
F
F
R
R
A
TEST CONDITIONS
R
UNIT WEIGHT (g)
= 5 A
= 10 A
= 20 A
= 5 A
= 10 A
= 20 A
= 100 V
= 70 V
θJC
= 25 °C unless otherwise noted)
175
A
= 25 °C unless otherwise noted)
1.75
1.39
1.46
1.85
1.39
T
T
T
T
T
T
V40100C
A
A
A
A
A
A
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
2.0
PACKAGE CODE
Figure 2. Forward Power Loss Characteristics Per Diode
VF40100C
SYMBOL
16
14
12
10
18
4W
4W
4W
8W
4W
8
6
4
2
0
4.0
V
I
0
R
F
D = 0.1
D = 0.2
5
Average Forward Current (A)
D = 0.3
VB40100C
BASE QUANTITY
TYP.
0.47
0.54
0.67
0.38
0.45
0.61
2.0
10
21
9
-
D = 0.5
10
800/reel
50/tube
50/tube
50/tube
50/tube
D = 0.8
15
VI40100C
D = t
MAX.
Document Number: 89042
1000
0.73
0.67
2.0
45
-
-
-
-
-
-
p
/T
DELIVERY MODE
20
Revision: 19-Oct-07
Tape and reel
D = 1.0
T
t
p
Tube
Tube
Tube
Tube
25
UNIT
UNIT
°C/W
mA
mA
µA
µA
V