VI40100C Vishay, VI40100C Datasheet - Page 3

• Manufacturer Part Number: VI40100C
• Description: Dual High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

Document Number: 89042
Revision: 19-Oct-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10000
0.001
1000
0.01
100
100
100
0.1
Figure 4. Typical Reverse Characteristics Per Diode
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
1
0.1
10
0
Percent of Rated Peak Reverse Voltage (%)
20
T
A
Instantaneous Forward Voltage (V)
= 125 °C
0.2
30
T
T
A
A
= 150 °C
T
= 125 °C
Reverse Voltage (V)
A
40
1
T
= 150 °C
A
T
0.4
= 100 °C
A
T
= 25 °C
A
50
= 25 °C
T
60
A
0.6
= 100 °C
10
70
80
0.8
V40100C, VF40100C, VB40100C & VI40100C
90
100
100
1
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
100
0.1
0.1
10
10
1
1
0.01
0.01
Vishay General Semiconductor
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
Junction to Case
V(B,I)40100C
10
10
VF40100C
www.vishay.com
100
100
3