C2D10120 Cree, Inc., C2D10120 Datasheet - Page 2

• Manufacturer Part Number: C2D10120
• Description: Silicon Carbide Schottky Diode
• Manufacturer: Cree, Inc.

Electrical Characteristics
Note:
1.
Thermal Characteristics
Typical Performance
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
V
I
20
18
16
14
12
10
C
θJC
R
8
6
4
2
0
F
C
0.0
TJ = 25˚C
TJ = 75˚C
TJ = 125˚C
TJ = 175˚C
C2D10120 Rev. C
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Thermal Resistance from Junction to Case
Figure 1. Forward Characteristics
1.0
V
F
Parameter
Forward Voltage (V)
2.0
Parameter
3.0
4.0
Typ.
1000
1.6
2.5
10
20
61
80
59
5.0
Typ.
0.48
Max.
1000
200
1.8
3.0
°C/W
200
180
160
140
120
100
Unit
80
60
40
20
0
Unit
0
µ
nC
pF
V
A
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 500 A/
T
V
V
V
F
F
J
R
R
R
R
R
R
= 10 A T
= 10 A T
500
= 25°C
= 1200 V T
= 1200 V T
= 1200 V, I
= 0 V, T
= 200 V, T
= 400 V, T
V
R
Test Conditions
Reverse Voltage (V)
J
T
T
T
T
J
J
J
J
= 25°C, f = 1 MHz
J
J
=25°C
=175°C
= 25˚C
= 75˚C
= 125˚C
= 175˚C
J
J
1000
F
µ
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
J
J
=25°C
=150°C
= 10 A
s
1500
Note
2000