DSA8004 (Tentative)
Silicon PNP epitaxial planar type
For low frequency output amplification
Absolute Maximum Ratings T
Note) *: Printed circuit board: Copper foil area of 1 cm
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2009
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * 1: Pulse measurement
of 1.7 mm for the collector portion
* 2: Rank classification
Product of no-rank is not classified and have no marking symbol for rank.
Marking Symbol
Parameter
Parameter
Code
Rank
h
FE1
*
* 1
* 1
a
* 1
120 to 240
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
4BR
a
R
R
= 25°C
Symbol
Symbol
V
V
h
V
V
V
V
V
V
I
FE1
h
T
CE(sat)
BE(sat)
C
I
CBO
P
I
T
CBO
CEO
EBO
CBO
CEO
EBO
FE2
f
CP
stg
C
T
ob
C
j
2
* 2
or more, and the board thickness
170 to 340
4BS
S
S
I
I
I
V
V
V
I
I
V
V
–55 to +150
C
C
E
C
C
CB
CE
CE
CE
CB
= –10 mA, I
= –10 mA, I
= –1 mA, I
= –1 A, I
= –1 A, I
Rating
–60
–50
150
= –20 V, I
= –2 V, I
= –2 V, I
= –10 V, I
= –10 V, I
–5
–2
–3
1
ZJD00354AED
B
B
120 to 340
C
C
= –50 mA
= –50 mA
No-rank
B
E
C
Conditions
E
C
E
= –200 mA
= –1 A
= 0
= 0
= 0
4B
= 0
= –50 mA
= 0, f = 1 MHz
0
Unit
°C
°C
W
V
V
V
A
A
Package
Marking Symbol: 4B
Code
Pin Name
MT-2-A1-B
1. Emitter
2. Collector
3. Base
Min
–60
–50
120
–5
60
– 0.2
– 0.9
Typ
130
33
– 0.1
– 0.3
Max
–1.2
340
60
MHz
Unit
mA
pF
V
V
V
V
V
1