RB225N-40 ROHM Co. Ltd., RB225N-40 Datasheet
RB225N-40
Manufacturer Part Number
RB225N-40
Description
Schottky Barrier Diodes
Manufacturer
ROHM Co. Ltd.
Datasheet
1.RB225N-40.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RB225N-40
Manufacturer:
ROHM
Quantity:
30 000
Diodes
Schottky barrier diode
(Silicon epitaxial planar type)
RB225N-40
RB225N-40 is a device in high-power LPDS package
achieving low V
This product contributes to improving efficiency
and reducing of loss in switching power supplies.
1) High reliability
2) Low V
Repetitive peak reverse voltage
Reverse voltage(DC)
Average rectified forward current
Forward current surge peak （60Hz/1cyc.)
Junction temperature
Storage temperature
Forward voltage *1
Reverse current *1
Forward voltage *2
Reverse current *2
Description
Features
Absolute maximum ratings (Ta=25°C)
Electrical characteristic (Ta=25°C)
F
Parameter
F
and low I
Parameter
R
.
Symbol
V
V
I
I
R
R
F
F
Symbol
Tstg
V
I
Dimentions (Unit : mm)
Structure
V
FSM
Min.
Io
Tj
RM
R
-
-
-
-
（１）
（２）
2.54
-40 to 175
Limits
（３）
175
40
40
30
50
0.55
0.55
Max.
500
500
RB225N
40
（１）
10.1±0.3
5.08±02
（２）
（３）
Unit
℃
℃
0.74
1.2
V
V
A
A
Unit
µA
µA
+0.2
-0.1
V
V
+0.2
-0.1
I
V
I
V
F
F
=10A
R
=20A
R
=40V
=40V
RB225N-40
0.4
2.7±0.2
Conditions
+0.2
-0.1
4.5±0.2
0～0.3
1.3±0.2
1/1
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RB225N-40 Summary of contents
Page 1
... Diodes Schottky barrier diode (Silicon epitaxial planar type) RB225N-40 Description RB225N- device in high-power LPDS package achieving low V and low This product contributes to improving efficiency and reducing of loss in switching power supplies. Features 1) High reliability 2) Low V F Absolute maximum ratings (Ta=25°C) ...
Page 2
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...