IHD215 CT-Concept Technologie AG, IHD215 Datasheet - Page 7

• Manufacturer Part Number: IHD215
• Description: Intelligent Half-bridge Drivers For Igbts And Power Mosfets
• Manufacturer: CT-Concept Technologie AG

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Overview
The intelligent half-bridge drivers of the
IHD series are universal driver modules
designed for power MOSFETs and IGBTs
in switching operation.
All IHD types have mutually compatible
contacts and differ only in their drive per-
formance (maximum gate current and
output power of the DC/DC converter) .
I n t e r n e t :
Functional Description
If the rising or falling times are too high (i.e. driving is too slow), reliable transfer of the drive informa-
tion cannot be guaranteed.
The gate current must be limited to its maximum value by a gate resistor.
At a load of 10nF in series with 20 .
Maximum continuous or repeatedly-applied DC voltage or peak value of the repeatedly-applied AC
voltage between the inputs and outputs as well as between the power supply inputs and all other termi-
nals and between output 1 and output 2. Caution: in the case of a continuously-applied DC voltage of
over 600Vdc between the signalization outputs and the outputs G1, E1 or G2, E2, the long-term charac-
teristics of the optocouplers used for the state acknowledgment may become impaired. However, types
rated and selected for higher partial-discharge voltages are also available (see note 15).
This specification guarantees that the drive information will be transferred reliable even at a high dc-link
voltage and fastest switching operations.
The MTBF (mean time between failures) is calculated to MIL HDBK 217F at an ambient temperature of
40°C, a typical load and when the driver is exposed to a current of air. Further information on reliability
may be obtained from CONCEPT upon request.
The application-specific self-heating of the drivers - specially at high load - must be taken into account.
The outputs SO1/SO2 are designed for an operating current of 1mA. A 50-year service life of the opto-
couplers used is predicted at 1mA and an ambient temperature of 40°C.
The partial discharge is not measured for the standard types. For main power applications, a sufficient
safety margin exists between the typical operating voltage of < 600Vdc and the partial discharge
extinction voltage of typically about 1500 Vpeak. Tested and selected types with guaranteed partial-dis-
charge immunity can be supplied for applications with maximum requirements and higher operating
voltages (such as railroad applications).
In the case of a fault, the driver turns the power semiconductor off almost without a delay. The acknow-
ledgment runs through an optocoupler that has a delay time of about 20µs. This means that the power
transistor has already been turned-off for about 20µs when the fault message reaches the control side.
The test voltage of 4000 Vac(rms)/50Hz may be applied only once during a minute. It should be noted
that with this (strictly speaking obsolete) test method, some (minor) damage occurs to the isolation layers
due to the partial discharge. Consequently, this test is not performed at CONCEPT as a series test. In the
case of repeated isolation tests (e.g. module test, equipment test, system test) the subsequent tests should
be performed with a lower test voltage: the test voltage is reduced by 500V for each additional test. The
more modern if more elaborate partial-discharge measurement is better suited than such test methods as
it is almost entirely non-destructive.
w w w . I G B T - D r i v e r . c o m
Data Sheet & Application Manual
The IHD types with higher output powers
are outstandingly well suited for large
modules or a number of parallel-con-
nected transistors as well as for high-fre-
quency applications.
The intelligent half-bridge drivers of the
IHD series represent a complete solution
for all drive and protection problems in
connection with power MOSFET and IGBT
power stages. Practically no additional
IHD 215/280/680
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