NGB8204N ON Semiconductor, NGB8204N Datasheet - Page 3

• Manufacturer Part Number: NGB8204N
• Description: Ignition Igbt 18 Amps, 400 Volts
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Collector−to−Emitter On−Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
Characteristic
Symbol
V
C
C
t
t
C
CE(on)
d(off)
d(on)
gfs
OSS
RSS
ISS
t
t
f
r
R
R
V
V
V
V
V
G
G
CC
CC
CC
CC
CC
Test Conditions
= 1.0 kW, R
= 1.0 kW, R
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= 300 V, I
= 300 V, I
= 25 V, V
= 10 V, I
R
= 10 V, I
R
V
V
V
V
V
V
f = 1.0 MHz
R
R
I
I
I
I
I
I
G
G
C
C
CE
GE
GE
GE
GE
GE
C
C
C
C
L
L
= 6.0 A,
= 8.0 A,
= 1.0 kW,
= 1.0 kW,
= 10 A,
= 15 A,
= 10 A,
= 6.0 A
= 1.5 W
= 1.5 W
= 5.0 V,
= 4.0 V
= 4.0 V
= 4.0 V
= 4.0 V
= 4.5 V
C
C
3
GE
C
C
L
L
= 6.5 A
= 6.5 A
= 6.5 A
= 6.5 A
= 46 W,
= 46 W,
= 0 V
T
T
J
J
= −40°C to 150°C
= −40°C to 150°C
Temperature
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
Min
400
1.0
0.9
1.1
1.3
1.2
1.4
1.4
1.5
1.4
1.8
2.0
1.7
1.3
1.3
1.4
8.0
4.0
50
−
−
−
−
1.45
1.55
1.75
Typ
800
1.4
1.3
1.6
1.6
1.8
1.8
1.8
2.2
2.4
2.1
1.8
1.8
7.0
4.0
9.0
0.7
4.5
14
75
1000
Max
1.7*
1.9*
1.9*
2.1*
2.6*
2.0*
2.0*
2.0*
100
1.6
1.6
1.8
2.0
2.0
2.5
2.5
4.0
7.0
25
10
10
15
Mhos
mSec
mSec
Unit
V
pF
DC