NGB8204N ON Semiconductor, NGB8204N Datasheet - Page 4

• Manufacturer Part Number: NGB8204N
• Description: Ignition Igbt 18 Amps, 400 Volts
• Manufacturer: ON Semiconductor

4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
60
50
40
30
20
10
0
0
−50
0
0
T
J
Figure 5. Collector−to−Emitter Saturation
V
T
= 25°C
V
−25
V
Voltage versus Junction Temperature
CE
J
1
1
CE
GE
= 150°C
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
T
= 5 V
J
, JUNCTION TEMPERATURE (°C)
2
2
0
V
GE
TYPICAL ELECTRICAL CHARACTERISTICS
= 10 V
25
3
3
V
GE
= 10 V
50
4
4
75
5
5
100
6
6
I
I
I
I
I
C
C
C
C
C
= 25 A
= 20 A
= 10 A
= 15 A
125
= 5 A
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7
7
4.5 V
3.5 V
2.5 V
4.5 V
3.5 V
2.5 V
4 V
3 V
5 V
4 V
3 V
5 V
150
8
8
4
50
40
30
20
10
60
2.5
1.5
0.5
0
60
55
50
45
40
35
30
25
20
15
10
2
1
0
3
5
0
0
3
0
Figure 6. Collector−to−Emitter Voltage versus
V
T
CE
J
= −40°C
V
1
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE
1
(unless otherwise noted)
Figure 4. Transfer Characteristics
4
GE
Figure 2. Output Characteristics
= 10 V
, GATE TO EMITTER VOLTAGE (VOLTS)
GATE−TO−EMITTER VOLTAGE (V)
I
I
I
C
C
V
C
2
Gate−to−Emitter Voltage
GE
2
= 10 A
= 15 A
= 5 A
5
= 10 V
T
3
J
3
= −40°C
6
4
4
7
5
5
T
J
8
= 25°C
6
T
6
T
J
J
= 150°C
= 25°C
9
7
7
4.5 V
3.5 V
2.5 V
5 V
4 V
3 V
10
8
8